Abstract: Currently, the Cascode structure is widely used for high voltage normally-on GaN devices. Due to the rapid switching speed of GaN transistors, switching oscillations and electromagnetic interference (EMI) become more severe. It is possible for the device to be destroyed by divergent oscillation if it is turned off at a high current. To suppress such unwanted oscillations, adding RC snubber branches was considered an effective method. This paper studies the characteristics and operation principles of a 600 V cascade GaN HEMT. In addition, the effect of using a snubber circuit on the dynamic performance of GaN cascade is investigated. The device is simulated using LTspice simulation. The results show that using RC snubber circuit improves the device's dynamic performance and significantly reduces the high-frequency oscillations under high-current turn-on and -off conditions..
Keywords: Cascode GaN, Dynamic Response, LTspice, Oscillation, RC snubber Circuit, Double-Pulse Tester (DPT).
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