iosr-JECE   Volume-1 ~ Issue-3

Abstract :Protection of induction motor against possible problems such as overvoltage , overcurrent , overspeed , overtemperature , three-phase unbalanced occurs in course of it's operation is very important because it is used intensively in industry as an actuator. Induction motor can be protected using some components, such as timers, contactors, voltage, and current relays. The voltages, currents,speed, and temperature are the parameters of the motor, andthe problems occurred in the system, are monitored by microcontroller ATMEGA-16 which communicates with GSM and GSM send messages are shown on the LCD as well as on the mobile screen. Experimental resultsare presented in this paper which shows that the parameters of induction motor can be monitored using GSM which costs less, provides higher accuracy as well as safe and motorgets fully protected.
Keywords: ATMEGA-16, GSM,induction motor,monitoring,parameters.

[1] Petervas, ―Parameter estimation, condition monitoring,and diagnosisof electricalmachines.‖ dared on press oxford, 1993. ISBN-10:0198593759, ISBN-13: 978-0198593751.
[2] Atmel Mega16 Datasheet. (www.atmel.com/images/doc2466.pdf-united states)
[3] en.wikipedia.org/wiki/GSM
[4] Search mobilecomputing. techtarget.com.
[5] GSM Module (www.nowsms.com)
[6] ATcommand manual (www.sics.se/~bg/GC75-AT-Commands-R2A.pdf)
[7] Temperature sensors and control ICS –Temp sensor-LM35….(www.ti.com/product/LM35)
[8] Ramazan Bayindir , Member , IEEE, Ibrahim Sefa , Member , IEEE,Ilhami Colak, Member , IEEE and Askin Bektas. (Faults Detection and Protection of Induction Motor Using Sensor)
[9] LCD- Wikipedia, the free encyclopedia. (en.wikipedia.org/wiki/liquid_crystal_display)
[10] ELECTRIC MOTOR-Wikipedia, the free encyclopedia. en.wikipedia.org/wiki/Electric_motor) Similarly , in case of temperature , when temperature is beyond 60 degree then it will stop its working and message will send as‖ overheated‖

ABTRACTS : his application is related to Toll Plaza or check posts on the highways where continuous toll collection takes place by the persons appointed for its collection from the owners of the vehicles. It is intended by the user of this application to make oneself able to verify, "Is the person collecting the amount according to specified class of the vehicle or not?" It is useful for the auditors for verification of collected toll and vehicles passed.
KEYWORDS :Region of interest, Marker image, region growing.

[1] Rafael C.Gonzalez and Richard E. Woods, ―Digital Image Processing, Pearson Education‖, 2004.
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[10] http://www.eee.bham.ac.uk/spannm/computervision/image segmentation

Abstract: ISpeed and Noise performance of SiGe HBTs in terms of the cut off frequency and the noise figure is investigated by ATLAS software. Noisy transistors disgrace the performance of mobile wireless receivers and put off amplifiers and oscillators from meeting the rigorous requirements forced on them while working at frequencies in the GHz range. Small noise improvements at the device level can have a large blow on overall system presentation. In this paper, a model is projected for speed and noise analysis of SiGe HBTs that is implemented in software ATLAS from SILVACO international and analyzed all the way through a thorough method. The results of experimental and simulated model has been compared and contrasted.
Keywords:SiGe HBT , ATLAS Software , parameter extraction

1. Peter Ashburn, University of Southampton, Southampton, UK-" SiGe Heterojunction Bipolar Transistors", John Wiley & Sons, Ltd ISBN: 0-470-84838-3, 2003.
2. K. Kumar, and A. Chakravorty, "Physics based modeling of RF noise in SiGe HBTs", IEEE Proceedings of International workshop on Electron Devices and Semiconductor Technology IEDST'09', pp. 1-4, 2009.
3. Han-Yu Chen, Kun-Ming Chen, Guo-Wei Huang and Chun-Yen Chang, "Small-Signal Modeling of SiGe HBTs Using Direct Parameter-Extraction Method", IEEE Transactions on Electron Devices, vol. 53, no. 9, 2006.
4. Ankit Kashyap and R.K. Chauhan, "Effect of the Ge profile design on the performance of an n-p-n SiGe HBT-based analog circuit", Microelectronics journal, MEJ: 2554, 2008.
5. Pradeep Kumar and R. K. Chauhan, "Electrical parameter characterization of bandgap engineered Silicon Germainium HBT for HF applications", proceedings of International conference on Emerging trends in signal processing and VLSI design, GNEC Hyderabad, Jun. 11-13, pp. 1157- 1163, 2010.
6. S. Bousnina, P. Mandeville, A. B. Kouki, F. Ghannouchi, Direct parameter-extraction method for HBT small-signal model, IEEE Transactions on Microwave Theory and Techniques, Vol. 20, No. 2, February (2002).
7. L. Degachi, F. Ghannouchi, Systematic and Rigorous Extraction Method of HBT Small-Signal Model Parameters, IEEE Transactions on Microwave Theory and Techniques, Vol. 54, No. 2, February (2006).
8. F. Jun, Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z- parameter characterization,Journal of Semiconductors, Vol. 30, No. 8, August (2009).
9. J.M. Zamanillo, A. Tazon, A. mediavilla and C. Navarro, " Simple algorithm extracts SiGe HBT parameters ". Microwaves and RF, October 1999.
10. Atlas user's manual device simulation software, SILVACO international, 2004.